- SCTW100N120G2AG Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A, 30 mOhm (typ. TJ = 25 C) in an HiP247 package
- SCT027TO65G3 碳化硅功率MOSFET 650 V、29 mΩ(典型值)、60 A,采用TO-LL封装
- SCT014TO65G3 Silicon carbide Power MOSFET 650 V, 13.5 mOhm typ., 110 A in a TO-LL package
- SCT20N120H 碳化硅功率MOSFET,1200 V、20 A、189 mOhm(典型值,Tj = 150 C),HiP247封装
- SCTH100N120G2-AG 车规级碳化硅功率MOSFET 1200 V、75 A、30 mΩ(典型值,TJ = 25 °C),采用H2PAK-7封装
- SCTWA50N120 碳化硅功率MOSFET,1200 V、65 A、59 mOhm(典型值,TJ = 150 C),HiP247长引线封装
- SCT029H75G3AG 车规级碳化硅功率MOSFET 750 V、29 mΩ(典型值)、60 A,采用H2PAK-7封装
- SCT020H75G3AG 车规级碳化硅功率MOSFET 750 V、22 mΩ(典型值)、85 A,采用H2PAK-7封装
- SCTHCT250N12G3AG Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mOhm typ., 239 A in a STPAK high creepage package
- SCT015W120G3-4AG Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
- SCTW40N120G2VAG 汽车级碳化硅功率MOSFET,1200 V、33 A、75 mOhm(典型值,TJ = 25 C),HiP247封装
- SCTH40N120G2V-7 Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an H2PAK-7 package
- SCT018W65G3AG 车规级碳化硅功率MOSFET 650 V、20 mΩ(典型值)、55 A,采用HiP247封装
- SCT018H65G3AG 车规级碳化硅功率MOSFET 650 V、20 mΩ(典型值)、55 A,采用H2PAK-7封装
- SCT060W75G3-4AG Automotive-grade silicon carbide Power MOSFET 750 V, 60 mOhm typ., 30 A in an HiP247-4 package
- SCTW35N65G2VAG Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm typ. in an HiP247 package
- SCTH60N120G2-7 Silicon carbide Power MOSFET 1200 V, 35 mOhm typ., 60 A in an H2PAK-7 package
- SCT016H120G3AG 车规级碳化硅功率MOSFET 1200 V、16 mΩ(典型值)、112 A,采用H2PAK-7封装
- SCT040W120G3-4 碳化硅功率MOSFET,1200 V、40 mΩ(典型值)、40 A,采用HiP247-4封装
- SCT50N120 碳化硅功率MOSFET,1200 V、65 A、59 mOhm(典型值,TJ = 150 C),HiP247封装
- SCTH100N65G2-7AG 汽车级碳化硅功率MOSFET 650 V、20 mOhm(典型值,95 A),H2PAK-7封装
- SCT040H120G3-7 碳化硅功率MOSFET,1200 V、40 mΩ(典型值)、40 A,采用H2PAK-7封装
- SCTHS250N120G3AG Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mOhm typ., 239 A in a STPAK package
- SCTWA90N65G2V Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ. TJ = 25 C) in an HiP247 long leads package
- SCTW60N120G2AG Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mOhm typ., 52 A in an HiP247 package
- SCTWA60N12G2-4AG Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mOhm typ., 52 A in an HiP247-4 package
- SCTH60N120G2-7AG Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mOhm typ., 55 A in an H2PAK-7 package
- SCTWA40N120G2AG Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247 long leads package
- SCTW60N120G2 Silicon carbide Power MOSFET 1200 V, 35 mOhm typ., 60 A in an HiP247 package
- SCTWA40N12G24AG Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247-4 package
- SCTWA60N120G2-4 碳化硅功率MOSFET 1200 V、35 mOhm(典型值),60 A,HiP247封装
- SCTWA60N120G2AG Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mOhm typ., 52 A in an HiP247 long leads package
- SCT070W120G3AG 车规级碳化硅功率MOSFET,1200 V、63 mΩ(典型值)、30 A,采用HiP247封装
- SCT070W120G3-4AG Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
- SCT070HU120G3AG 车规级碳化硅功率MOSFET 1200 V、63 mOhm(典型值,30 A),HU3PAK封装
- SCT070H120G3AG Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
- SCT025H120G3AG 车规级碳化硅功率MOSFET 1200 V、27 mΩ(典型值)、55 A,采用H2PAK-7封装
- SCT025W120G3AG 车规级碳化硅功率MOSFET,1200 V、27 mΩ(典型值)、56 A,采用HiP247封装
- SCT040W120G3-4AG 汽车级碳化硅功率MOSFET,1200 V、40 mOhm(典型值,40 A),HiP247-4封装
- SCTWA70N120G2V 碳化硅功率MOSFET 1200 V、21 mΩ(典型值)、91 A,采用HiP247封装
- SCTH40N120G2V7AG 汽车级碳化硅功率MOSFET,1200 V、33 A、75 mOhm(典型值,TJ = 25 C),H2PAK-7封装
- SCT1000N170 碳化硅功率MOSFET:55 A、1700 V、70 mOhm(典型值,Tj = 150 C),N沟道,HiP247封装
- SCT012H90G3AG Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
- SCT1000N170AG 车规级碳化硅功率MOSFET,1700 V、1.0 Ω(典型值)、7 A,采用HiP247封装
- SCT040H120G3AG 车规级碳化硅功率MOSFET 1,200 V、40 mΩ(典型值)、40 A,采用H2PAK-7封装
- SCT20N170AG Automotive-grade silicon carbide Power MOSFET 1700 V, 64 mOhm typ., 43 A in an HiP247 package
- SCT012W90G3-4AG Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package
- SCT012W90G3AG 车规级碳化硅功率MOSFET 900 V、12 mΩ(典型值)、110 A,采用HiP247封装
- SCT019W120G3-4AG Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A in a HiP247-4 package
- SCT055TO65G3 Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package
- SCT025W120G3-4AG Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
- SCT025W120G3-4 Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
- SCT019HU120G3AG 车规级碳化硅功率MOSFET,1200 V、19.2 mΩ(典型值)、90 A,采用HU3PAK封装
- SCT027W65G3-4AG 汽车级碳化硅功率MOSFET,650 V、40 mOhm(典型值),110 A,HiP247-4封装
- SCTHS250N65G3 车规级碳化硅功率MOSFET,650 V、6.7 mΩ(典型值)、237 A,采用STPAK封装
- SCT014HU65G3AG Automotive-grade silicon carbide Power MOSFET 650 V, 13.5 mOhm typ., 110 A in an HU3PAK package
- SCTW35N65G2V 碳化硅功率MOSFET,650 V、45 A、55 mOhm(典型值,TJ = 25 C),HiP247封装
- SCTWA20N120 碳化硅功率MOSFET,1200 V、20 A、189 mOhm(典型值,Tj = 150 C),HiP247长引线封装
- SCT040W65G3-4 碳化硅功率MOSFET,650 V、45 mΩ(典型值)、30 A,采用HiP247-4封装
- SCTW70N120G2V 碳化硅功率MOSFET,650 V、100 A、22 mOhm(典型值,TJ = 150 C),HiP247封装
- SCTWA40N120G2V-4 Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247-4 package
- SCT055H65G3AG Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in an H2PAK-7 package
- SCT040W65G3-4AG 车规级碳化硅功率MOSFET,650 V、45 mΩ(典型值)、30 A,采用HiP247-4封装
- SCTL90N65G2V Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV package
- SCTWA70N120G2V-4 Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247-4 package
- SCT027H65G3AG 汽车级碳化硅功率MOSFET 650 V、40 mOhm(典型值),110 A,H2PAK-7封装
- SCTWA40N120G2V Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247 package
- SCT055W65G3-4AG Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in an HiP247-4 package
- SH70M12W3AG Automotive-grade ACEPACK SMIT half-bridge topology featuring 1200 V, 67 mOhm typ., 28 A SiC Power MOSFET
- SCTWA90N65G2V-4 Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package
- SCT055HU65G3AG Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in an HU3PAK package
- SCT30N120 碳化硅功率MOSFET,1200 V、45 A、90 mOhm(典型值,TJ = 150 C),HiP247封装
- SCT040HU120G3AG 车规级碳化硅功率MOSFET 1200 V、40 mΩ(典型值)、40 A,采用HU3PAK封装
- SCT10N120 碳化硅功率MOSFET,1200 V、12 A、520 mOhm(典型值,TJ = 150 C),HiP247封装
- SCT055H65G3-7 Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in an H2PAK-7 package
- SCTW40N120G2V Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247 package
- SCTHC250N120G3AG Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mOhm typ., 239 A in a STPAK high creepage package
- SCT20N120AG 车规级碳化硅功率MOSFET 1200 V、169 mΩ(典型值)、20 A,采用HiP247封装
- SCTWA30N120 碳化硅功率MOSFET 1200 V、80 mΩ(典型值)、45 A,采用HiP247长引脚封装
- SCT10N120AG 汽车级碳化硅功率MOSFET,1200 V、12 A、520 mOhm(典型值,TJ = 150 C),HiP247封装
- SCT027HU65G3AG 车规级碳化硅功率MOSFET,650 V、29 mΩ(典型值)、60 A,采用HU3PAK封装
- SCT011HU75G3AG Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A in an HU3PAK package
- SCT011H75G3AG Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A in an H2PAK-7 package
- SCT020W120G3-4AG 车规级碳化硅功率MOSFET,1200 V、18.5 mΩ(典型值)、100 A,采用HiP247-4封装
- SCT018W65G3-4AG 车规级碳化硅功率MOSFET 650 V、20 mΩ(典型值)、55 A,采用HiP247-4封装
- SCT020HU120G3AG 车规级碳化硅功率MOSFET 1200 V、18.5 mΩ(典型值)、100 A,采用HU3PAK封装
- SCTHS300N75G3AG 车规级碳化硅功率MOSFET,750 V、6.5 mΩ(典型值)、300 A,采用STPAK封装
- SCT020H120G3AG 汽车级碳化硅功率MOSFET 1200 V、20 mOhm(典型值),90 A,H2PAK-7封装
- SCT040TO65G3 Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package
- SCT018HU65G3AG Automotive-grade silicon carbide Power MOSFET 650 V, 21.5 mOhm typ., 60 A in an HU3PAK package
- SCTHS200N120G3AG 车规级碳化硅功率MOSFET,1200 V、9.3 mΩ(典型值)、170 A,采用STPAK封装
- SCTW90N65G2V 碳化硅功率MOSFET,650 V、119 A、18 mOhm(典型值,TJ = 25 C),HiP247封装
- SCTH90N65G2V-7 碳化硅功率MOSFET,650 V、116 A、18 mOhm(典型值,TJ = 25°C),H2PAK-7封装
- SCT045W17KAG 车规级碳化硅功率MOSFET,1700 V、55 mΩ(典型值)、48 A,采用HiP247封装
- SCTH70N120G2V-7 Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 90 A in an H2PAK-7 package
- SCT070W120G3-4 车规级碳化硅功率MOSFET,1200 V、63 mΩ(典型值)、30 A,采用HiP247-4封装
- SCT060HU75G3AG Automotive-grade silicon carbide Power MOSFET 750 V, 58 mOhm typ., 30 A in an HU3PAK package
- SCT040W120G3AG 车规级碳化硅功率MOSFET 1200 V、40 mΩ(典型值)、40 A,采用HiP247封装
- SCT019H120G3AG 车规级碳化硅功率MOSFET 1200 V、19.2 mΩ(典型值)、90 A,采用H2PAK-7封装
- SCTW100N65G2AG 汽车级碳化硅功率MOSFET,650 V、100 A、20 mOhm(典型值,TJ = 25°C),HiP247封装
- SCTH35N65G2V-7 碳化硅功率MOSFET,650 V、45 A、55 mOhm(典型值,TJ = 25 C),H2PAK-7封装
- SCTWA35N65G2V Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an HiP247 long leads package
- SCTH35N65G2V-7AG 汽车级碳化硅功率MOSFET,650 V、45 A、55 mOhm(典型值,TJ = 25 C),H2PAK-7封装
- SCT040HU65G3AG Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A in an HU3PAK package
- SCT018H65G3-7 碳化硅功率MOSFET,650 V、20 mΩ(典型值)、55 A,采用H2PAK-7封装
- SCT040H65G3SAG Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A in an H2PAK-7 straight leads package
- SCT040H65G3-7 碳化硅功率MOSFET,650 V、40 mΩ(典型值)、30 A,采用H2PAK-7封装
- SCT070H120G3-7 碳化硅功率MOSFET,1200 V、63 mΩ(典型值)、30 A,采用H2PAK-7封装
- SCT040H65G3AG Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A in an H2PAK-7 package
- SCT20N120 碳化硅功率MOSFET,1200 V、20 A、189 mOhm(典型值,Tj = 150 C),HiP247封装
- SCTL35N65G2V Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV package
- SCTWA35N65G2V-4 Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an HiP247-4 package
- SCT040W65G3AG 车规级碳化硅功率MOSFET 650 V、40 mOhm典型值,110 A,HiP247封装
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