产品概要
描述
该碳化硅功率MOSFET晶体管采用ST先进、创新的第二代碳化硅（SiC）MOSFET技术开发而成。该器件单位面积导通电阻极低且具有良好的开关性能。开关损耗的变化几乎与结温无关。
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性能一览
- 稳定的超快速本体二极管
- 低电容
- 源极感应引脚可提高效率
特别推荐
EDA Symbols, Footprints and 3D Models
STMicroelectronics - SCTL90N65G2V
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Quality and Reliability
| Part Number | Marketing Status | Package | Grade | 符合RoHS级别 | Longevity Commitment | Longevity Starting Date | Material Declaration** |
|---|---|---|---|---|---|---|---|
| SCTL90N65G2V | Active 产品已量产 | PowerFLAT 8x8 HV | Industrial | Ecopack2 | - | - |
SCTL90N65G2V
Package:
PowerFLAT 8x8 HVMaterial Declaration**:
XML(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
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Sample & Buy
| Part Number | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SCTL90N65G2V | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
SCTL90N65G2V Active
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