产品概述
描述
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247 package, allows designers to use an industry standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.
-
所有功能
- AEC-Q101 rev. C qualified
- Very fast and robust intrinsic body diode
- Low capacitances
- Very high operating junction temperature capability (TJ = 200 °C)
EDA符号、封装和3D模型
意法半导体 - SCT1000N170AG
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Please select one model supplier :
符号
封装
3D模型
所有资源
| 资源标题 | 版本 | 更新时间 |
|---|
SPICE models (1)
| 资源标题 | 版本 | 更新时间 | ||
|---|---|---|---|---|
| ZIP | 1.0 | 23 May 2023 | 23 May 2023 |
样片和购买
| 产品型号 | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | 包 | 包装类型 | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SCT1000N170AG | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
SCT1000N170AG 批量生产