产品概要
描述
This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The resulting product has one of the lower on-resistance and reduced gate charge values, among all silicon based fast switching super-junction Power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency.
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性能一览
- Very low FOM (RDS(on)·Qg)
- Higher dv/dt capability
- Excellent switching performance
- Easy to drive
- 100% avalanche tested
特别推荐
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STB25N018M9
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Quality and Reliability
| Part Number | Marketing Status | Package | Grade | 符合RoHS级别 | Longevity Commitment | Longevity Starting Date | Material Declaration** |
|---|---|---|---|---|---|---|---|
| STB25N018M9 | Active 产品已量产 | D2PAK | Industrial | Ecopack2 | 10 | 2026-03-18T00:00:00.000+01:00 | |
STB25N018M9
Package:
D2PAKMaterial Declaration**:
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
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Sample & Buy
| Part Number | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STB25N018M9 | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
STB25N018M9 Active