产品概要
描述
这款N沟道功率MOSFET基于创新的超结MDmesh M9技术，专为中高压应用设计，具备极低的单位面积导通电阻RDS(on)。基于硅的M9技术采用多漏制造工艺，增强了器件结构。在所有硅基快速开关超结功率MOSFET中，运用此工艺制造的产品具有较低的导通电阻并降低了栅极电荷值，特别适合需要超高功率密度和出色效率的应用。
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性能一览
- 易于驱动
- 通过额外的驱动源引脚实现出色的开关性能
- 更高的dv/dt性能
- 更高的VDSS额定值
- 非常低的FOM (RDS(on)·Qg)
- 100%经过雪崩测试
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STO65N033M9
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
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Symbols
Footprints
3D models
所有资源
| Resource title | 版本 | Latest update | Actions | Details | 下載 |
|---|
SPICE models (1)
| Resource title | 版本 | Latest update | Actions | Options | ||
|---|---|---|---|---|---|---|
| ZIP | 1.0 | 02 Sep 2026 | 02 Sep 2026 |
Quality and Reliability
| Part Number | Marketing Status | Package | Grade | 符合RoHS级别 | Longevity Commitment | Longevity Starting Date | Material Declaration** |
|---|---|---|---|---|---|---|---|
| STO65N033M9 | Active 产品已量产 | TO-LL | Industrial | Ecopack2 | 10 | 2026-08-26T00:00:00.000+02:00 |
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
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Sample & Buy
| Part Number | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STO65N033M9 | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
STO65N033M9 Active
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