Product overview
描述
The STL190N8F8 is a 80 V N-channel enhancement mode Power MOSFET designed in STripFET F8 technology featuring an enhanced trench gate structure.
It ensures a state-of-the-art of figure of merit for very low on-state resistance while reducing internal capacitances and gate charge for faster and more efficient switching.
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All features
- MSL1 grade
- 175 °C maximum operating junction temperature
- 100% avalanche tested
- Low gate charge Qg
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STL190N8F8
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3D models
Quality and Reliability
| Part Number | Marketing Status | Package | Grade | 符合RoHS级别 | Longevity Commitment | Longevity Starting Date | Material Declaration** |
|---|---|---|---|---|---|---|---|
| STL190N8F8 | Active 产品已量产 | PowerFLAT 5x6 | Industrial | Ecopack2 | 10 | 2026-05-15T00:00:00.000+02:00 | |
STL190N8F8
Package:
PowerFLAT 5x6Material Declaration**:
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
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Sample & Buy
| Part Number | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STL190N8F8 | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
STL190N8F8 Active