产品概要
描述
该N沟道功率MOSFET利用STripFET F7技术（采用增强型沟槽栅结构），增强了线性模式耐受能力，并提供更宽的SOA和非常低的导通电阻。由此而来的MOSFET实现了线性模式和开关操作之间的最佳平衡。
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性能一览
- 最优SOA性能
- 高电流浪涌能力
- 极低的导通电阻
特别推荐
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STH200N10WF7-2
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
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Quality and Reliability
| Part Number | Marketing Status | Package | Grade | 符合RoHS级别 | Longevity Commitment | Longevity Starting Date | Material Declaration** |
|---|---|---|---|---|---|---|---|
| STH200N10WF7-2 | Active 产品已量产 | H2PAK-2 | Industrial | Ecopack1 (*) | 7 | 2025-02-01T00:00:00.000+01:00 |
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
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Sample & Buy
| Part Number | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STH200N10WF7-2 | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
STH200N10WF7-2 Active
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