STB33N60DM2

批量生产
Design Win Education

N沟道600 V、0.110 Ohm典型值、24 A MDmesh DM2功率MOSFET,D2PAK封装

下载数据手册 Order Direct

产品概述

描述

These high voltage N-channel Power MOSFETs are part of the MDmesh DM2 fast recovery diode series. They offer very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering them suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

  • 所有功能

    • Fast-recovery body diode
    • Extremely low gate charge and input capacitance
    • Low on-resistance
    • 100% avalanche tested
    • Extremely high dv/dt ruggedness
    • Zener-protected

EDA符号、封装和3D模型

STMicroelectronics - STB33N60DM2

Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.

Please select one model supplier :

Symbols

符号

Footprints

封装

3D model

3D模型

质量与可靠性

产品型号 Marketing Status 等级规格 符合RoHS级别 材料声明**
STB33N60DM2
批量生产
D2PAK 工业 Ecopack2

STB33N60DM2

Package:

D2PAK

Material Declaration**:

PDF XML

Marketing Status

批量生产

Package

D2PAK

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此,它们可能不是100%适用于特定的设备。有关特定设备的信息,请联系 销售支持

样片和购买

Swipe or click the button to explore more details Don't show this again
产品型号
供货状态
Budgetary Price (US$)*/Qty
从ST订购
Order from distributors
包装类型
RoHS
Country of Origin
ECCN (US)
ECCN (EU)
STB33N60DM2
Available at distributors

经销商的可用性 STB33N60DM2

代理商名称
地区 库存 最小订购量 第三方链接

代理商库存报告日期:

无法联系到经销商,请联系我们的销售办事处

STB33N60DM2 批量生产

Budgetary Price (US$)*/Qty:
-
包:
包装类型:
RoHS:
Country of Origin:
ECCN (US):
ECCN (EU):

产品型号:

STB33N60DM2

代理商名称

代理商库存报告日期:

Swipe or click the button to explore more details Don't show this again

(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商