STW34NM60ND

批量生产
Design Win

N-channel 600 V, 97 mOhm, 29 A FDmesh II Power MOSFET in a TO-247 package

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产品概述

描述

These devices are N-channel FDmesh™ V Power MOSFETs produced using ST’s MDmesh™ V technology, which is based on an innovative proprietary vertical structure. The resulting product boasts an extremely low on-resistance that is unrivaled among silicon-based Power MOSFETs, and superior switching performance with intrinsic fast-recovery body diode.

  • 所有功能

    • The world’s best RDS(on)in TO-220 amongst the fast recovery diode devices
    • 100% avalanche tested
    • Low input capacitance and gate charge
    • Low gate input resistance
    • Extremely high dv/dt and avalanche capabilities

EDA符号、封装和3D模型

意法半导体 - STW34NM60ND

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Symbols

符号

Footprints

封装

3D model

3D模型

质量与可靠性

料号 Marketing Status 等级规格 符合RoHS级别 Longevity Commitment Longevity Starting Date 材料声明**
STW34NM60ND
批量生产
TO-247 工业 Ecopack2 - -

STW34NM60ND

Package:

TO-247

Material Declaration**:

PDF XML

Marketing Status

批量生产

Package

TO-247

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此,它们可能不是100%适用于特定的设备。有关特定设备的信息,请联系 销售支持

样片和购买

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包装类型
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ECCN (EU)
STW34NM60ND
Available at distributors

经销商的可用性 STW34NM60ND

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STW34NM60ND 批量生产

Budgetary Price (US$)*/Qty:
-
包:
包装类型:
RoHS:
Country of Origin:
ECCN (US):
ECCN (EU):

料号:

STW34NM60ND

代理商名称

代理商库存报告日期:

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(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商