STU4N62K3

批量生产
Design Win

N沟道620 V、1.7 Ohm典型值、3.8 A SuperMESH3(TM) 功率MOSFET,IPAK封装

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产品概述

描述

These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.

  • 所有功能

    • 100% avalanche tested
    • Extremely high dv/dt capability
    • Gate charge minimized
    • Very low intrinsic capacitance
    • Improved diode reverse recovery characteristics
    • Zener-protected

EDA符号、封装和3D模型

意法半导体 - STU4N62K3

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质量与可靠性

产品型号 Marketing Status 等级规格 符合RoHS级别 材料声明**
STU4N62K3
批量生产
IPAK 工业 Ecopack2

STU4N62K3

Package:

IPAK

Material Declaration**:

PDF XML

Marketing Status

批量生产

Package

IPAK

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此,它们可能不是100%适用于特定的设备。有关特定设备的信息,请联系 销售支持

样片和购买

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STU4N62K3
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经销商的可用性 STU4N62K3

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STU4N62K3 批量生产

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(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商