产品概述
描述
This very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency.
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所有功能
- Worldwide best RDS(on) x area
- Worldwide best FOM (figure of merit)
- Ultra low gate charge
- 100% avalanche tested
- Zener-protected
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特别推荐
EDA符号、封装和3D模型
STMicroelectronics - STP80N240K6
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
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符号
封装
3D模型
所有资源
| 资源标题 | 版本 | 更新时间 |
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SPICE models (1)
| 资源标题 | 版本 | 更新时间 | ||
|---|---|---|---|---|
| ZIP | 2.0 | 10 Aug 2024 | 10 Aug 2024 |
样片和购买
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| 产品型号 | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | 包 | 包装类型 | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STP80N240K6 | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
STP80N240K6 批量生产
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