产品概述
描述
这种超高电压N沟道功率MOSFET基于意法半导体20年的超结技术经验，采用终极MDmesh K6技术设计而成。其结果为优异的单位面积导通电阻和栅极电荷，适用于对功率密度和高效率有较高要求的应用。
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All features
- 全球极低的RDS(on) x面积
- 全球出色的品质因数 (FoM)
- 极低的栅极电荷
- 经过100%雪崩测试
- 齐纳保护
特别推荐
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STP80N1K1K6
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Please select one model supplier :
Symbols
Footprints
3D models
Quality and Reliability
| Part Number | Marketing Status | Package | Grade | 符合RoHS级别 | Longevity Commitment | Longevity Starting Date | Material Declaration** |
|---|---|---|---|---|---|---|---|
| STP80N1K1K6 | Active 产品已量产 | TO-220 | Industrial | Ecopack2 | 10 | 2024-06-04T00:00:00.000+02:00 | |
STP80N1K1K6
Package:
TO-220Material Declaration**:
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
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Sample & Buy
| Part Number | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STP80N1K1K6 | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
STP80N1K1K6 Active
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distributors
无法联系到经销商，请联系我们的销售办事处
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