产品概要
描述
该高压N沟道MOSFET出自快恢复体二极管MDmesh DM6系列与之前一代的快恢复特性MDmesh相比，DM6兼具超低恢复电荷 (Qrr),恢复时间(trr)并且大幅提升单位面积 RDS(on) 值，具有最高效的开关表现，适用于市面上要求最苛刻的高效桥式拓扑和ZVS移相转换器。
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性能一览
- 快恢复二极管
- 单位面积的Rds(on)值比上一代更低
- 低栅极电荷、输入电容和电阻
- 经过100％雪崩测试
- 极高的dv/dt强度
- 稳压保护
特别推荐
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STP50N65DM6
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
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所有资源
| Resource title | 版本 | Latest update | Actions | Details | 下載 |
|---|
SPICE models (1)
| Resource title | 版本 | Latest update | Actions | Options | ||
|---|---|---|---|---|---|---|
| ZIP | 1.0 | 25 Nov 2019 | 25 Nov 2019 |
Quality and Reliability
| Part Number | Marketing Status | Package | Grade | 符合RoHS级别 | Longevity Commitment | Longevity Starting Date | Material Declaration** |
|---|---|---|---|---|---|---|---|
| STP50N65DM6 | Active 产品已量产 | TO-220 | Industrial | Ecopack2 | 10 | 2020-09-28T00:00:00.000+02:00 |
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
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Sample & Buy
| Part Number | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STP50N65DM6 | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
STP50N65DM6 Active
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