STP3NK60Z

批量生产
Design Win

N沟道600 V、3.2 Ohm典型值、2.4 A SuperMESH功率MOSFET,TO-220封装

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产品概述

描述

These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.

  • 所有功能

    • Extremely high dv/dt capability
    • 100% avalanche tested
    • Gate charge minimized
    • Very low intrinsic capacitance
    • Zener-protected

EDA符号、封装和3D模型

意法半导体 - STP3NK60Z

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Symbols

符号

Footprints

封装

3D model

3D模型

质量与可靠性

产品型号 Marketing Status 等级规格 符合RoHS级别 材料声明**
STP3NK60Z
批量生产
TO-220 工业 Ecopack2

STP3NK60Z

Package:

TO-220

Material Declaration**:

PDF XML

Marketing Status

批量生产

Package

TO-220

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此,它们可能不是100%适用于特定的设备。有关特定设备的信息,请联系 销售支持

样片和购买

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STP3NK60Z
Available at distributors

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STP3NK60Z 批量生产

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Country of Origin:
ECCN (US):
ECCN (EU):

产品型号:

STP3NK60Z

Operating Temperature (°C)

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Max:

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(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商