STP26N60DM6

批量生产
Design Win Education

N沟道600 V、165 mOhm典型值、18 A MDmesh DM6功率MOSFET,TO-220封装

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产品概述

描述

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

  • 所有功能

    • Fast-recovery body diode
    • Lower RDS(on) per area vs previous generation
    • Low gate charge, input capacitance and resistance
    • 100% avalanche tested
    • Extremely high dv/dt ruggedness
    • Zener-protected

EDA符号、封装和3D模型

意法半导体 - STP26N60DM6

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封装

3D model

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质量与可靠性

产品型号 Marketing Status 等级规格 符合RoHS级别 材料声明**
STP26N60DM6
批量生产
TO-220 工业 Ecopack2

STP26N60DM6

Package:

TO-220

Material Declaration**:

PDF XML

Marketing Status

批量生产

Package

TO-220

Grade

Industrial

RoHS Compliance Grade

Ecopack2

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样片和购买

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STP26N60DM6
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STP26N60DM6 批量生产

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产品型号:

STP26N60DM6

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(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商