产品概述
描述
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
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所有功能
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
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意法半导体提供全新的高压MDmesh M6和M9 STPOWER MOSFET，这些产品采用紧凑且散热效率高的TO-LL表面贴装型封装，可同时提供高的电气和热效率、外形紧凑和节省空间等特性，适用于SMPS、数据中心和太阳能微逆变器等电源转换应用。这些器件具有附加的Kelvin源引脚，可减小接通/关断开关损耗，有助于设计人员进一步提高效率。
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EDA符号、封装和3D模型
STMicroelectronics - STP24NM60N
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符号
封装
3D模型
样片和购买
| 产品型号 | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | 包 | 包装类型 | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STP24NM60N | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
STP24NM60N 批量生产