600 V STMESH沟槽T高压MOSFET系列是意法半导体最新的高压MOSFET创新技术成果。沟槽T系列是首款采用深沟槽技术通过蚀刻和填充外延层制造而成的12英寸超结MOSFET系列产品。该系列产品使设计人员能够在采用低导通电阻和低栅极电荷的紧凑型系统解决方案中提升功率密度。经过优化的T系列具有非常出色的开关性能，可在最大限度降低开关损耗的同时，提供稳健的雪崩能力。该系列产品为硬开关拓扑（如PFC功率级所用拓扑）树立了全新的效率标杆。
与先前的MDmesh M6系列技术相比，沟槽T系列的最大漏极源导通电阻（按封装类型分类）更低。
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