The 600 V STMESH trench T high voltage MOSFET series is the latest ST innovative technology for high-voltage MOSFETs. The trench T series represents the first 12” superjunction MOSFET produced by etching and filling the epitaxial layer using deep trench technology. It enables designers to increase power density in more compact system solutions featuring low on-resistance and gate charge. The T series is optimized for very good switching performance to minimize switching loss, as well as provide robust avalanche capability. The series sets new efficiency benchmarks in hard switching topologies, like those employed in PFC power stages.
The trench T series offers a lower maximum drain-source on-resistance compared to the previous MDmesh M6 series technology, categorized by package type.
Applications
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Benefits
- Balanced cost & performance for a broad range of power applications
- Lowering process complexity vs multidrain technology
- More capacity and shorter cycle time
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意法半导体提供全新的高压MDmesh M6和M9 STPOWER MOSFET，这些产品采用紧凑且散热效率高的TO-LL表面贴装型封装，可同时提供高的电气和热效率、外形紧凑和节省空间等特性，适用于SMPS、数据中心和太阳能微逆变器等电源转换应用。这些器件具有附加的Kelvin源引脚，可减小接通/关断开关损耗，有助于设计人员进一步提高效率。
