产品概要
描述
该P沟道功率MOSFET采用STripFET H6技术开发，具有新型沟槽栅极结构。该功率MOSFET在各个封装中均展示了非常低的RDS(on)。
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性能一览
- 超低的导通电阻
- 超低的栅极电荷
- 高雪崩容量
- 低栅驱动功率损耗
特别推荐
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STL4P3LLH6
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Please select one model supplier :
Symbols
Footprints
3D models
所有资源
| Resource title | 版本 | Latest update | Actions | Details | 下載 |
|---|
SPICE models (1)
| Resource title | 版本 | Latest update | Actions | Options | ||
|---|---|---|---|---|---|---|
| LIB | 1.0 | 09 Apr 2025 | 09 Apr 2025 |
Quality and Reliability
| Part Number | Marketing Status | Package | Grade | 符合RoHS级别 | Longevity Commitment | Longevity Starting Date | Material Declaration** |
|---|---|---|---|---|---|---|---|
| STL4P3LLH6 | Active 产品已量产 | PowerFLAT 2x2 | Industrial | Ecopack2 | - | - |
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
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Sample & Buy
| Part Number | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STL4P3LLH6 | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
STL4P3LLH6 Active
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