STL19N60M2

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N沟道600 V、0.278 Ohm典型值、11 A MDmesh M2功率MOSFET,PowerFLAT 8x8 HV封装

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产品概述

描述

This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

EDA符号、封装和3D模型

意法半导体 - STL19N60M2

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