产品概述
描述
该N-沟道功率MOSFET利用STripFET™F7技术和增强型沟槽栅极结构，可降低通态电阻，同时降低内部电容和栅极电荷，从而使开关速度更快、能效更高。
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所有功能
- 符合AEC-Q101标准
- 市场领先的低RDS(on)
- 出色的品质因数 (FoM)
- 低Crss/Ciss比值，增强EMI抗扰度
- 高雪崩耐量
EDA符号、封装和3D模型
意法半导体 - STH80N10LF7-2AG
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Please select one model supplier :
符号
封装
3D模型
质量与可靠性
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样片和购买
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| 产品型号 | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | 包 | 包装类型 | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STH80N10LF7-2AG | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
STH80N10LF7-2AG NRND
Budgetary Price (US$)*/Qty:
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distributors
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包装类型:
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