产品概要
描述
该器件是使用MDmesh™ M2增强性能 (EP) 技术开发的N沟道功率MOSFET。该器件采用条形布局并改进了垂直结构，具有具有较低的导通电阻、经过优化的开关特性和极低的关断开关损耗，因此适用于要求最严苛的甚高频转换器。
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性能一览
- 非常低的栅极电荷
- 优异的输出电容 (Coss) 特性
- 关断开关损耗非常之低
- 经过100%雪崩测试
- 齐纳保护
特别推荐
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STF11N60M2-EP
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Please select one model supplier :
Symbols
Footprints
3D models
所有资源
| Resource title | 版本 | Latest update | Actions | Details | 下載 |
|---|
SPICE models (1)
| Resource title | 版本 | Latest update | Actions | Options | ||
|---|---|---|---|---|---|---|
| ZIP | 1.1 | 29 Aug 2018 | 29 Aug 2018 |
Quality and Reliability
| Part Number | Marketing Status | Package | Grade | 符合RoHS级别 | Longevity Commitment | Longevity Starting Date | Material Declaration** |
|---|---|---|---|---|---|---|---|
| STF11N60M2-EP | Active 产品已量产 | TO-220FP | Industrial | Ecopack2 | - | - | |
STF11N60M2-EP
Package:
TO-220FPMaterial Declaration**:
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
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Sample & Buy
| Part Number | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STF11N60M2-EP | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
STF11N60M2-EP Active
Budgetary Price (US$)*/Qty:
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无法联系到经销商，请联系我们的销售办事处
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