STD2N62K3
Active
Design Win
N沟道620 V、3 Ohm典型值、2.2 A SuperMESH3(TM) 功率MOSFET,DPAK封装

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Product overview

描述

These MDmesh™ K3 Power MOSFETs are the result of improvements applied to STMicroelectronics’ MDmesh™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.

  • All features

    • 100% avalanche tested
    • Extremely high dv/dt capability
    • Very low intrinsic capacitance
    • Improved diode reverse recovery characteristics
    • Zener-protected

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STD2N62K3

Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.

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Quality and Reliability

Part Number Marketing Status Package Grade 符合RoHS级别 Longevity Commitment Longevity Starting Date Material Declaration**
STD2N62K3
Active
DPAK Industrial Ecopack2 - -

STD2N62K3

Package:

DPAK

Material Declaration**:

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Marketing Status

Active

Package

DPAK

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此,它们可能不是100%适用于特定的设备。有关特定设备的信息,请联系 销售支持

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(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商