STB46N30M5

批量生产
Design Win

N沟道300 V、0.037 Ohm典型值、53 A MDmesh M5功率MOSFET,D2PAK封装

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产品概述

描述

This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.

  • 所有功能

    • Designed for automotive applications and AEC-Q101 qualified
    • Amongst the best RDS(on)* area
    • High dv/dt capability
    • Excellent switching performance
    • Easy to drive
    • 100% avalanche tested

EDA符号、封装和3D模型

STMicroelectronics - STB46N30M5

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Symbols

符号

Footprints

封装

3D model

3D模型

质量与可靠性

产品型号 Marketing Status 等级规格 符合RoHS级别 材料声明**
STB46N30M5
批量生产
D2PAK 汽车应用 Ecopack1

STB46N30M5

Package:

D2PAK

Material Declaration**:

PDF XML

Marketing Status

批量生产

Package

D2PAK

Grade

Automotive

RoHS Compliance Grade

Ecopack1

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此,它们可能不是100%适用于特定的设备。有关特定设备的信息,请联系 销售支持

样片和购买

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ECCN (EU)
STB46N30M5
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经销商的可用性 STB46N30M5

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STB46N30M5 批量生产

Budgetary Price (US$)*/Qty:
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包:
包装类型:
RoHS:
Country of Origin:
ECCN (US):
ECCN (EU):

产品型号:

STB46N30M5

代理商名称

代理商库存报告日期:

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(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商