产品概述
描述
该器件是基于MDmesh™ M5创新垂直工艺技术与知名的PowerMESH水平布局相结合的N沟道功率MOSFET。由此产生的产品具有极低的导通电阻，特别适合需要高功率和高效率的应用。
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所有功能
- 极低的RDS(on)
- 低栅极电荷和输入电容
- 出色的开关性能
- 经过100%雪崩测试
特别推荐
EDA符号、封装和3D模型
意法半导体 - STB45N30M5
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Please select one model supplier :
符号
封装
3D模型
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样片和购买
| 料号 | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | 包 | 包装类型 | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STB45N30M5 | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
STB45N30M5 批量生产
Budgetary Price (US$)*/Qty:
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distributors
无法联系到经销商，请联系我们的销售办事处
包:
包装类型:
RoHS:
Country of Origin:
ECCN (US):
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