产品概要
描述
该器件是基于MDmesh™ M5创新垂直工艺技术与知名的PowerMESH水平布局相结合的N沟道功率MOSFET。由此产生的产品具有极低的导通电阻，特别适合需要高功率和高效率的应用。
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All features
- 极低的RDS(on)
- 低栅极电荷和输入电容
- 出色的开关性能
- 经过100%雪崩测试
特别推荐
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STB45N30M5
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Please select one model supplier :
Symbols
Footprints
3D models
Quality and Reliability
| Part Number | Marketing Status | Package | Grade | 符合RoHS级别 | Longevity Commitment | Longevity Starting Date | Material Declaration** |
|---|---|---|---|---|---|---|---|
| STB45N30M5 | Active 产品已量产 | D2PAK | Industrial | Ecopack2 | - | - |
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
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Sample & Buy
| Part Number | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STB45N30M5 | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
STB45N30M5 Active
Budgetary Price (US$)*/Qty:
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无法联系到经销商，请联系我们的销售办事处
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