产品概述
描述
This N-channel Power MOSFET is based on the most innovative super-junction MDmesh DM9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area coupled with a fast-recovery diode. The silicon-based DM9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The fast-recovery diode featuring very low recovery charge (Qrr), time (trr) and RDS(on) makes this fast-switching super-junction Power MOSFET tailored for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
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All features
- Fast-recovery body diode
- Very low FOM (RDS(on)•Qg)
- Low gate charge, input capacitance and resistance
- 100% avalanche tested
- Extremely high dv/dt ruggednes
- Excellent switching performance thanks to the extra driving source pin
EDA Symbols, Footprints and 3D Models
STMicroelectronics - ST8L65N065DM9
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所有资源
| Resource title | 版本 | Latest update | Actions | Details | 下載 |
|---|
SPICE models (1)
| Resource title | 版本 | Latest update | Actions | Options | ||
|---|---|---|---|---|---|---|
| ZIP | 1.0 | 05 Nov 2025 | 05 Nov 2025 |
Quality and Reliability
| Part Number | Marketing Status | Package | Grade | 符合RoHS级别 | Longevity Commitment | Longevity Starting Date | Material Declaration** |
|---|---|---|---|---|---|---|---|
| ST8L65N065DM9 | Active 产品已量产 | PowerFLAT 8x8 HV | Industrial | Ecopack2 | 10 | 2025-11-05T00:00:00.000+01:00 |
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
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Sample & Buy
| Part Number | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| ST8L65N065DM9 | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
ST8L65N065DM9 Active