产品概述
描述
This N-channel Power MOSFET is based on the most innovative super-junction MDmesh DM9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area coupled with a fast-recovery diode. The silicon-based DM9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The fast-recovery diode featuring very low recovery charge (Qrr), time (trr) and RDS(on) makes this fast-switching super-junction Power MOSFET tailored for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
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所有功能
- Fast-recovery body diode
- Very low FOM (RDS(on)•Qg)
- Low gate charge, input capacitance and resistance
- 100% avalanche tested
- Extremely high dv/dt ruggednes
- Excellent switching performance thanks to the extra driving source pin
精选 视频
意法半导体提供全新的高压MDmesh M6和M9 STPOWER MOSFET，这些产品采用紧凑且散热效率高的TO-LL表面贴装型封装，可同时提供高的电气和热效率、外形紧凑和节省空间等特性，适用于SMPS、数据中心和太阳能微逆变器等电源转换应用。这些器件具有附加的Kelvin源引脚，可减小接通/关断开关损耗，有助于设计人员进一步提高效率。
EDA符号、封装和3D模型
意法半导体 - ST8L65N065DM9
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符号
封装
3D模型
所有资源
| 资源标题 | 版本 | 更新时间 |
|---|
SPICE models (1)
| 资源标题 | 版本 | 更新时间 | |||
|---|---|---|---|---|---|
| ZIP | 1.0 | 05 Nov 2025 | 05 Nov 2025 |
质量与可靠性
| 料号 | Marketing Status | 包 | 等级规格 | 符合RoHS级别 | Longevity Commitment | Longevity Starting Date | 材料声明** |
|---|---|---|---|---|---|---|---|
| ST8L65N065DM9 | 批量生产 | PowerFLAT 8x8 HV | 工业 | Ecopack2 | - | - | |
ST8L65N065DM9
Package:
PowerFLAT 8x8 HVMaterial Declaration**:
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
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样片和购买
| 料号 | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | 包 | 包装类型 | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| ST8L65N065DM9 | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
ST8L65N065DM9 批量生产