Product overview
描述
这款超高压N沟道功率MOSFET采用MDmesh™ K5技术进行设计，该技术以创新的专有垂直结构为基础。因此，能够显著降低导通电阻并具有非常低的栅极电荷，适用于要求高功率密度和高能效的应用。
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All features
- 符合AEC-Q101标准
- 极低的品质因数 (FoM)
- 超低的栅极电荷
- 经过100%雪崩测试
- 稳压保护
- H2PAK-2高爬电距离封装，适用于极高电压应用
EDA Symbols, Footprints and 3D Models
STMicroelectronics - ST2H8N120K5AG
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
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所有资源
| Resource title | 版本 | Latest update | Actions | Details | 下載 |
|---|
SPICE models (1)
| Resource title | 版本 | Latest update | Actions | Options | ||
|---|---|---|---|---|---|---|
| ZIP | 1.0 | 13 Feb 2026 | 13 Feb 2026 |
Quality and Reliability
| Part Number | Marketing Status | Package | Grade | 符合RoHS级别 | Longevity Commitment | Longevity Starting Date | Material Declaration** |
|---|---|---|---|---|---|---|---|
| ST2H8N120K5AG | Active 产品已量产 | H2PAK-2 HC | Automotive | Ecopack1 | 10 | 2026-02-12T00:00:00.000+01:00 |
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
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Sample & Buy
| Part Number | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| ST2H8N120K5AG | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
ST2H8N120K5AG Active
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