手册
会议文章
- 3C-SiC Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiC Substrates for Sustainable Wide-Band-Gap Power Devices
- 4H-SiC Defects Evolution by Thermal Processes
- An evaluation of the failures in resonant topologies due to the body diode and the role of fast diode MOSFET
- Analysis of the impacts of the VGSth in modern SMPS
- Automotive-grade P-Channel Power MOSFETs for Static, Dynamic and Repetitive Reverse Polarity Protection
技术说明
- TN1378 HU3PAK 封装的安装和热性能
- Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products
- Leadless packages with enhanced board level solder joint reliability for automotive application
- Mounting instructions for SMD (surface mounting device) packages
- Mounting instructions for THD (through-hole device) packages
应用手册
- A motor drives system for wheelchair applications
- A new approach to parameter extraction for the spice Power MOSFET model
- An isolated gate drive for Power MOSFETs and IGBTs
- Car ignition with IGBTs
- Correlation between rectangular and triangular power pulses in the thermal and electrical behavior of power MOSFETs
Technology Presentation
宣传册
- 1200-1700V MDmesh K5 SERIES: Ideal for high input voltage auxiliary power supply systems
- 250V-600V-650V MDmesh M9 超结功率MOSFET确保理想效率
- 300-1200 V MDmesh power MOSFETs
- 300-1200 V MDmesh: The most complete SJ MOSFETs offer for (H)EV power solutions
- 400/650 V MDmesh™ DM2: STPOWER Power MOSFET series with fast-recovery body diode