氮化镓(GaN)技术通过硅MOSFET支持实现前所未有的高速、更高效率和功率密度,正在深刻改变电力工程领域。我们先进MasterGaN系统级封装集成了GaN晶体管和栅极驱动器,具有优化的栅极驱动布局、较高的功率密度以及因最小寄生效应而提升的开关频率,因此效率更高。
GaN驱动设备是用于增强模式GaN FET或N沟道功率MOSFET的半桥栅极驱动器。
高电子迁移率晶体管(GaN HEMT)技术的引入丰富了高压功率变换器。GaN晶体管的使用带来了更高的功率密度、效率,以及开关频率,帮助人们研发出体积更小且重量更轻的PCB,简化了SMPS的设计,提高了整体性能。
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For more information, visit: https://bit.ly/ST-innovation Check out the whitepaper: https://bit.ly/ST-GaN-whitepaper
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