产品概要
描述
The STRH12P10 is a P-channel Power MOSFET developed with the Rad-hard STripFET technology in hermetic TO-257AA package.
Specifically designed to sustain Total Ionized Dose and immunity to heavy ion effects, it is qualified as per ESCC 5205/029 detail specification. In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence.
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性能一览
- Fast switching
- 100% avalanche tested
- Hermetic package
- 100 krad TID
- SEE radiation hardened
EDA Symbols, Footprints and 3D Models
所有资源
| Resource title | 版本 | Latest update | Actions | Details | 下載 |
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SPICE models (1)
| Resource title | 版本 | Latest update | Actions | Options | ||
|---|---|---|---|---|---|---|
| ZIP | 4.0 | 22 May 2024 | 22 May 2024 |
Quality and Reliability
| Part Number | Marketing Status | Package | Grade | 符合RoHS级别 | Longevity Commitment | Longevity Starting Date | Material Declaration** |
|---|---|---|---|---|---|---|---|
| STRH12P10GY1 | Active 产品已量产 | TO-257 | Industrial | N/A | - | - | |
| STRH12P10GYG | Active 产品已量产 | TO-257 | Industrial | N/A | - | - | |
| STRH12P10GYT | Active 产品已量产 | TO-257 | Industrial | N/A | - | - | |
STRH12P10GY1
Package:
TO-257Material Declaration**:
STRH12P10GYG
Package:
TO-257Material Declaration**:
STRH12P10GYT
Package:
TO-257Material Declaration**:
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此,它们可能不是100%适用于特定的设备。有关特定设备的信息,请联系 销售支持。
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Sample & Buy
| Part Number | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | Package: Product Marking | SMD PIN/Detailed Spec | Quality Level | Lead Finish | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STRH12P10GYG | | | distributors 无法联系到经销商,请联系我们的销售办事处 |
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| STRH12P10GYT | | | distributors 无法联系到经销商,请联系我们的销售办事处 |
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| STRH12P10GY1 | | | distributors 无法联系到经销商,请联系我们的销售办事处 |
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STRH12P10GYG Active
STRH12P10GYT Active
STRH12P10GY1 Active