产品概述
描述
The STRH12P10 is a P-channel Power MOSFET developed with the Rad-hard STripFET technology in hermetic TO-257AA package.
Specifically designed to sustain Total Ionized Dose and immunity to heavy ion effects, it is qualified as per ESCC 5205/029 detail specification. In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence.
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所有功能
- Fast switching
- 100% avalanche tested
- Hermetic package
- 100 krad TID
- SEE radiation hardened
EDA符号、封装和3D模型
意法半导体 - STRH12P10
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Please select one model supplier :
符号
封装
3D模型
所有资源
| 资源标题 | 版本 | 更新时间 |
|---|
SPICE models (1)
| 资源标题 | 版本 | 更新时间 | ||
|---|---|---|---|---|
| ZIP | 4.0 | 22 May 2024 | 22 May 2024 |
质量与可靠性
| 产品型号 | Marketing Status | 包 | 等级规格 | 符合RoHS级别 | Longevity Commitment | Longevity Starting Date | 材料声明** |
|---|---|---|---|---|---|---|---|
| STRH12P10GY1 | 批量生产 | TO-257 | 工业 | N/A | - | - | |
| STRH12P10GYG | 批量生产 | TO-257 | 工业 | N/A | - | - | |
| STRH12P10GYT | 批量生产 | TO-257 | 工业 | N/A | - | - | |
STRH12P10GY1
Package:
TO-257Material Declaration**:
STRH12P10GYG
Package:
TO-257Material Declaration**:
STRH12P10GYT
Package:
TO-257Material Declaration**:
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
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样片和购买
| 产品型号 | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | 包 | 包装类型 | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | Package: Product Marking | SMD PIN/Detailed Spec | Quality Level | Lead Finish | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STRH12P10GYG | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
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| STRH12P10GYT | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
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| STRH12P10GY1 | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
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STRH12P10GYG 批量生产
STRH12P10GYT 批量生产
STRH12P10GY1 批量生产