意法半导体的抗辐射功率MOSFET专用于对可靠性要求高的空间应用，提供N沟道和P沟道两个版本，击穿电压可达100 V，漏极电流可达48 A，最大导通电阻RDS(on)为30 mΩ，P沟道和N沟道版本可承受的电离总剂量 (TID) 分别为100 krad和50 krad。
这些抗辐射功率MOSFET采用意法半导体专有的STripFET™工艺制造，提供裸片和气密型SMD.5封装，以及通孔TO-254AA和TO-257AA封装。
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