产品概要
描述
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters.
-
性能一览
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
特别推荐
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STW32NM50N
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Please select one model supplier :
Symbols
Footprints
3D models