STV240N75F3
Obsolete
Design Win
N沟道75 V、3 mOhm典型值、200 A STripFET F3功率MOSFET,PowerSO-10封装

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Product overview

描述

该器件是使用STripFET™ F3技术开发的N沟道功率MOSFET。其设计旨在最大限度地降低导通电阻和栅极电荷,从而提供卓越的开关性能。

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STV240N75F3

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