Product overview
描述
该器件是使用STripFET™ F3技术开发的N沟道功率MOSFET。其设计旨在最大限度地降低导通电阻和栅极电荷,从而提供卓越的开关性能。
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All features
- 减少传导损耗
- 超薄外形,寄生电感极低
该器件是使用STripFET™ F3技术开发的N沟道功率MOSFET。其设计旨在最大限度地降低导通电阻和栅极电荷,从而提供卓越的开关性能。
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