产品概述
描述
This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™V technology. The device has been optimized to achieve very low on-state resistance, contributing to a FOM that is among the best in its class.
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所有功能
- Very low profile package
- Conduction losses reduced
- Switching losses reduced
- 2.5 V gate drive
- Very low threshold device
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EDA符号、封装和3D模型
意法半导体 - STT5N2VH5
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