产品概要
描述
This STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM.
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性能一览
- RDS(on) * Qg industry benchmark
- Very low switching gate charge
- Extremely low on-resistance RDS(on)
- Low gate drive power losses
- High avalanche ruggedness
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EDA Symbols, Footprints and 3D Models
STMicroelectronics - STS8DN3LLH5
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所有资源
| Resource title | 版本 | Latest update | Actions | Details | 下載 |
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SPICE models (1)
| Resource title | 版本 | Latest update | Actions | Options | ||
|---|---|---|---|---|---|---|
| ZIP | 1.0 | 01 Aug 2015 | 01 Aug 2015 |