Product overview
描述
这款超高压N-沟道功率MOSFET采用MDmesh™ K5技术进行设计。该技术以创新型专有垂直结构为基础。因此，能够显著降低导通电阻并具有非常低的栅极电荷，适用于要求高功率密度和高效率的应用。
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All features
- 业界先进的低RDS(on) x面积
- 业界出色的品质因数 (FoM)
- 极低的栅极电荷
- 经过100%雪崩测试
- 稳压保护
特别推荐
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STP7N90K5
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
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Symbols
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3D models
所有资源
| Resource title | 版本 | Latest update | Actions | Details | 下載 |
|---|
SPICE models (1)
| Resource title | 版本 | Latest update | Actions | Options | ||
|---|---|---|---|---|---|---|
| ZIP | 1.0 | 08 Mar 2017 | 08 Mar 2017 |