产品概要
描述
该N-沟道功率MOSFETs利用STripFET™F7技术和增强型沟槽栅极结构，可降低通态电阻，同时降低内部电容和栅极电荷，从而使开关速度更快、能效更高。
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性能一览
- 处于市面上最低的RDS(on)行列
- 出色的品质因数（FoM）
- 较低的Crss/Ciss比值使得其具有更强的抗EMI能力
- 坚固的抗雪崩能力
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STP45N10F7
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Please select one model supplier :
Symbols
Footprints
3D models
所有资源
| Resource title | 版本 | Latest update | Actions | Details | 下載 |
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SPICE models (1)
| Resource title | 版本 | Latest update | Actions | Options | ||
|---|---|---|---|---|---|---|
| ZIP | 1.0 | 15 Apr 2016 | 15 Apr 2016 |