产品概要
描述
This device is an N-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.
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性能一览
- RDS(on)* Qgindustry benchmark
- Extremely low on-resistance RDS(on)
- Logic level drive
- High avalanche ruggedness
- 100% avalanche tested
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STMicroelectronics - STP160N4LF6
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所有资源
| Resource title | 版本 | Latest update | Actions | Details | 下載 |
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SPICE models (1)
| Resource title | 版本 | Latest update | Actions | Options | ||
|---|---|---|---|---|---|---|
| ZIP | 1.0 | 01 Aug 2015 | 01 Aug 2015 |