产品概述
描述
This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high frequency converters.
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所有功能
- Extremely low gate charge
- Excellent output capacitance (COSS) profile
- Very low turn-off switching losses
- 100% avalanche tested
- Zener-protected
特别推荐
EDA符号、封装和3D模型
所有资源
| 资源标题 | 版本 | 更新时间 | Actions | 細節 | 下載 |
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SPICE models (1)
| 资源标题 | 版本 | 更新时间 | Actions | Options | ||
|---|---|---|---|---|---|---|
| ZIP | 1.1 | 13 Jan 2016 | 13 Jan 2016 |