Product overview
描述
This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high frequency converters.
-
All features
- Extremely low gate charge
- Excellent output capacitance (COSS) profile
- Very low turn-off switching losses
- 100% avalanche tested
- Zener-protected
特别推荐
EDA Symbols, Footprints and 3D Models
所有资源
| Resource title | 版本 | Latest update | Actions | Details | 下載 |
|---|
SPICE models (1)
| Resource title | 版本 | Latest update | Actions | Options | ||
|---|---|---|---|---|---|---|
| ZIP | 1.1 | 13 Jan 2016 | 13 Jan 2016 |