产品概述
描述
This device is 40 V N-channel STripFET™ VI Power MOSFET based on the ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.
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所有功能
- Standard threshold drive
- 100% avalanche tested
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特别推荐
EDA符号、封装和3D模型
意法半导体 - STP120N4F6
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样片和购买
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| 产品型号 | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | 包 | 包装类型 | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STP120N4F6 | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
STP120N4F6 批量生产
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