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STP11N60DM2
Obsolete
Design Win
N沟道600 V、0.370 Ohm典型值、10 A MDmesh DM2功率MOSFET，TO-220封装

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产品概要

描述

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

  • 性能一览

    • Fast-recovery body diode
    • Extremely low gate charge and input capacitance
    • Low on-resistance
    • 100% avalanche tested
    • Extremely high dv/dt ruggedness
    • Zener-protected
    阅读更多信息 阅读较少信息

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STMicroelectronics - STP11N60DM2

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