Product overview
描述
该N-沟道功率MOSFET利用STripFET™F7技术和增强型沟槽栅极结构，可降低通态电阻，同时降低内部电容和栅极电荷，从而使开关速度更快、能效更高。
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All features
- 处于市面上最低的 RDS(on) 行列
- 出色的品质因数（FoM）
- 较低的Crss/Ciss 比值使得其具有更强的抗EMI能力
- 坚固的抗雪崩能力
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EDA Symbols, Footprints and 3D Models
STMicroelectronics - STP100N10F7
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Quality and Reliability
| Part Number | Marketing Status | Package | Grade | 符合RoHS级别 | Longevity Commitment | Longevity Starting Date | Material Declaration** |
|---|---|---|---|---|---|---|---|
| STP100N10F7 | Active 产品已量产 | TO-220 | Industrial | Ecopack2 | 7 | 2025-02-01T00:00:00.000+01:00 | |
STP100N10F7
Package:
TO-220Material Declaration**:
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
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Sample & Buy
| Part Number | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STP100N10F7 | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
STP100N10F7 Active
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无法联系到经销商，请联系我们的销售办事处
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