产品概要
描述
该器件是采用STripFET™ F6技术开发的N沟道功率MOSFET，具有新的栅极结构。因而，功率MOSFET在不同封装中都能呈现最低的RDS（on）。
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性能一览
- 通过AEC-Q101认证
- 超低导通电阻
- 超低栅极电荷
- 高雪崩坚固性
- 低栅驱动功率损耗
- 侧面可焊性封装
特别推荐
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STLD125N4F6AG
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
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Symbols
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3D models
所有资源
| Resource title | 版本 | Latest update | Actions | Details | 下載 |
|---|
SPICE models (1)
| Resource title | 版本 | Latest update | Actions | Options | ||
|---|---|---|---|---|---|---|
| ZIP | 1.0 | 22 May 2017 | 22 May 2017 |
Quality and Reliability
| Part Number | Marketing Status | Package | Grade | 符合RoHS级别 | Longevity Commitment | Longevity Starting Date | Material Declaration** |
|---|---|---|---|---|---|---|---|
| STLD125N4F6AG | NRND 不推荐用于新设计。量产仅供支持现有生产。 | PowerFLAT 5x6 Dual Side Cooling | Automotive | Ecopack2 | - | - |
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
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Sample & Buy
| Part Number | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STLD125N4F6AG | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
STLD125N4F6AG NRND
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无法联系到经销商，请联系我们的销售办事处
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