产品概要
描述
This device is a dual N-channel Power MOSFET developed using STMicroelectronics’ STripFET™ H5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class.
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性能一览
- Designed for automotive applications and AEC-Q101 qualified
- Logic level VGS(th)
- 175 °C maximum junction temperature
- Wettable flanks package
特别推荐
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STL66DN3LLH5
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Quality and Reliability
| Part Number | Marketing Status | Package | Grade | 符合RoHS级别 | Longevity Commitment | Longevity Starting Date | Material Declaration** |
|---|---|---|---|---|---|---|---|
| STL66DN3LLH5 | Active 产品已量产 | PowerFLAT 5x6 double island WF | Automotive | Ecopack2 | - | - |
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
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Sample & Buy
| Part Number | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STL66DN3LLH5 | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
STL66DN3LLH5 Active