Product overview
描述
STL325N4F8AG是一款40 V N沟道增强型功率MOSFET，采用STripFET F8技术设计，具备增强型沟槽栅极结构。
该器件凭借极低的导通电阻实现了业界领先的品质因数，同时降低了内部电容和栅极电荷，从而实现更快、更高效的开关性能。
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All features
- 符合AEC-Q101标准
- MSL1级
- 最高工作结温达175 °C
- 经过100%雪崩测试
- 低栅极电荷Qg
- 采用可湿性侧面封装
特别推荐
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STL325N4F8AG
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所有资源
| Resource title | 版本 | Latest update | Actions | Details | 下載 |
|---|
SPICE models (1)
| Resource title | 版本 | Latest update | Actions | Options | ||
|---|---|---|---|---|---|---|
| LIB | 1.0 | 12 Nov 2024 | 12 Nov 2024 |
SIMetrix models (1)
| Resource title | 版本 | Latest update | Actions | Options | ||
|---|---|---|---|---|---|---|
| ZIP | 1.0 | 29 May 2025 | 29 May 2025 |
Quality and Reliability
| Part Number | Marketing Status | Package | Grade | 符合RoHS级别 | Longevity Commitment | Longevity Starting Date | Material Declaration** |
|---|---|---|---|---|---|---|---|
| STL325N4F8AG | Active 产品已量产 | PowerFLAT 5x6 WF | Automotive | Ecopack2 | 10 | 2025-02-01T00:00:00.000+01:00 |
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
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Sample & Buy
| Part Number | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STL325N4F8AG | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
STL325N4F8AG Active
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