产品概述
描述
This N-channel Power MOSFET utilizes STripFET F8 technology featuring an enhanced trench gate structure.
It ensures very low on-state resistance while reducing internal capacitances and gate charge for faster and more efficient switching.
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所有功能
- MSL1 grade
- 175 °C operating temperature
- 100% avalanche tested
特别推荐
EDA符号、封装和3D模型
意法半导体 - STL120N10F8
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
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符号
封装
3D模型
所有资源
| 资源标题 | 版本 | 更新时间 |
|---|
SPICE models (1)
| 资源标题 | 版本 | 更新时间 | ||
|---|---|---|---|---|
| LIB | 1.0 | 24 Feb 2023 | 24 Feb 2023 |
样片和购买
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| 产品型号 | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | 包 | 包装类型 | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STL120N10F8 | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
STL120N10F8 批量生产
Budgetary Price (US$)*/Qty:
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distributors
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