Product overview
描述
该N-沟道功率MOSFET利用STripFET™F7技术和增强型沟槽栅极结构，可降低通态电阻，同时降低内部电容和栅极电荷，从而使开关速度更快、能效更高。
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All features
- 符合AEC-Q101标准
- 市场领先的低RDS(on)
- 出色的品质因数 (FoM)
- 低Crss/Ciss比值，增强EMI抗扰度
- 高雪崩耐量
- 采用可湿性侧面封装
特别推荐
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STL105N4LF7AG
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
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3D models
所有资源
| Resource title | 版本 | Latest update | Actions | Details | 下載 |
|---|
SPICE models (1)
| Resource title | 版本 | Latest update | Actions | Options | ||
|---|---|---|---|---|---|---|
| LIB | 1.0 | 06 Mar 2023 | 06 Mar 2023 |
Quality and Reliability
| Part Number | Marketing Status | Package | Grade | 符合RoHS级别 | Longevity Commitment | Longevity Starting Date | Material Declaration** |
|---|---|---|---|---|---|---|---|
| STL105N4LF7AG | Active 产品已量产 | PowerFLAT 5x6 WF | Automotive | Ecopack2 | - | - |
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
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Sample & Buy
| Part Number | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STL105N4LF7AG | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
STL105N4LF7AG Active
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