产品概要
描述
该器件是一款采用先进专有沟槽栅极场截止结构设计的IGBT。该器件是新型HB系列IGBT中的成员，有效平衡了导通损耗与开关损耗，大幅提升了频率转换器的效率。此外，其略正的VCE(sat) 温度系数和非常紧密的参数分布，使得并联操作更为安全。
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性能一览
- 符合AEC-Q101标准
- 高速开关系列
- 最高结温：TJ = 175 °C
- 低VCE(sat) = 1.65 V（典型值）@ IC = 80 A
- 最小尾电流
- 参数分布紧密
- 正VCE(sat) 温度系数
- 超快软恢复反向并联二极管
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STGWA80H65DFBAG
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所有资源
| Resource title | 版本 | Latest update | Actions | Details | 下載 |
|---|
SPICE models (1)
| Resource title | 版本 | Latest update | Actions | Options | ||
|---|---|---|---|---|---|---|
| ZIP | 1.0 | 16 Dec 2022 | 16 Dec 2022 |
Quality and Reliability
| Part Number | Marketing Status | General Description | Package | Grade | 符合RoHS级别 | Longevity Commitment | Longevity Starting Date | Material Declaration** |
|---|---|---|---|---|---|---|---|---|
| STGWA80H65DFBAG | Active 产品已量产 | Automotive-grade trench gate field-stop 650 V, 80 A high speed HB series IGBT in a TO-247 long leads package | TO-247 long leads | Automotive | Ecopack2 | 10 | 2023-05-26T00:00:00.000+02:00 |
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
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Sample & Buy
| Part Number | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating temperature (°C) | Operating Temperature (°C) (max) | General Description | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | ||||||||||||||
| STGWA80H65DFBAG | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
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STGWA80H65DFBAG Active
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