STGWA80H65DFBAG

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Automotive-grade trench gate field-stop 650 V, 80 A high speed HB series IGBT in a TO-247 long leads package

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产品概述

描述

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

  • 所有功能

    • AEC-Q101 qualified
    • High-speed switching series
    • Maximum junction temperature: TJ = 175 °C
    • Low VCE(sat) = 1.65 V (typ.) @ IC = 80 A
    • Minimized tail current
    • Tight parameter distribution
    • Positive temperature VCE(sat) coefficient
    • Soft and very fast recovery antiparallel diode

EDA符号、封装和3D模型

STMicroelectronics - STGWA80H65DFBAG

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质量与可靠性

产品型号 Marketing Status 一般描述 等级规格 符合RoHS级别 材料声明**
STGWA80H65DFBAG
批量生产
Automotive-grade trench gate field-stop 650 V, 80 A high speed HB series IGBT in a TO-247 long leads package TO-247 long leads 汽车应用 Ecopack2

STGWA80H65DFBAG

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Automotive-grade trench gate field-stop 650 V, 80 A high speed HB series IGBT in a TO-247 long leads package

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Marketing Status

批量生产

General Description

Automotive-grade trench gate field-stop 650 V, 80 A high speed HB series IGBT in a TO-247 long leads package

Package

TO-247 long leads

Grade

Automotive

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样片和购买

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STGWA80H65DFBAG
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STGWA80H65DFBAG 批量生产

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STGWA80H65DFBAG

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一般描述:

Automotive-grade trench gate field-stop 650 V, 80 A high speed HB series IGBT in a TO-247 long leads package

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(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商