产品概述
描述
The new reverse-conducting IGBT 650 V has been developed using an advanced proprietary trench gate field-stop structure with monolithic integrated body diode, whose performances are optimized both in conduction and switching losses for soft commutation.
The result is a product specifically designed to maximize efficiency for any resonant and soft-switching applications.
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所有功能
- Designed for soft-commutation only
- Maximum junction temperature: TJ = 175 °C
- VCE(sat) = 1.45 V (typ.) @ IC = 50 A
- Minimized tail current
- Tight parameter distribution
- Low thermal resistance
- Monolithic integrated diode with low voltage drop
- Positive VCE(sat) temperature coefficient
EDA符号、封装和3D模型
意法半导体 - STGWA50IH65R
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
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符号
封装
3D模型
质量与可靠性
| 料号 | Marketing Status | 一般描述 | 包 | 等级规格 | 符合RoHS级别 | Longevity Commitment | Longevity Starting Date | 材料声明** |
|---|---|---|---|---|---|---|---|---|
| STGWA50IH65R | 批量生产 产品已量产 | Reverse-conducting 650 V, 50 A, soft-switching IHR series IGBT in a TO-247 long leads package | TO-247 long leads | 工业 | Ecopack2 | 10 | 2026-04-15T00:00:00.000+02:00 |
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
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样片和购买
| 料号 | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | 包 | 包装类型 | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating temperature (°C) | Operating Temperature (°C) (max) | 一般描述 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | ||||||||||||||
| STGWA50IH65R | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
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STGWA50IH65R 批量生产