STGW80H65DFB-4

批量生产
Design Win

650 V、80 A高速沟槽栅场截止HB系列IGBT

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产品概述

描述

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. A faster switching event can be achieved by the Kelvin pin, which separates power path from driving signal. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

  • 所有功能

    • VCE(sat) = 1.6 V (typ.) @ IC = 80 A
    • Maximum junction temperature: TJ = 175 °C
    • High speed switching series
    • Minimized tail current
    • Tight parameter distribution
    • Safe paralleling
    • Low thermal resistance
    • Very fast soft recovery antiparallel diode
    • Excellent switching performance thanks to the extra driving kelvin pin

EDA符号、封装和3D模型

STMicroelectronics - STGW80H65DFB-4

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质量与可靠性

产品型号 Marketing Status 一般描述 等级规格 符合RoHS级别 材料声明**
STGW80H65DFB-4
批量生产
Trench gate field-stop 650 V, 80 A high speed HB series IGBT TO247-4 工业 Ecopack2

STGW80H65DFB-4

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Trench gate field-stop 650 V, 80 A high speed HB series IGBT

Material Declaration**:

Marketing Status

批量生产

General Description

Trench gate field-stop 650 V, 80 A high speed HB series IGBT

Package

TO247-4

Grade

Industrial

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STGW80H65DFB-4
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STGW80H65DFB-4 批量生产

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Trench gate field-stop 650 V, 80 A high speed HB series IGBT

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(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商