产品概要
描述
该器件是采用先进的专有沟槽栅场截止结构开发的IGBT。该设备是新型“HB”系列IGBT中的成员，有效平衡了导通损耗与开关损耗，大幅提升了频率转换器的效率。此外，它的VCE(sat)微正温度系数特性和超紧密的参数分布，使得并联操作更为安全。
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性能一览
- 符合AEC-Q101
- 高速开关系列
- 最大结温：TJ = 175 °C
- VCE(sat) = 1.55 V (typ.) @ IC = 30 A
- 安全并联
- 紧凑参数分布
- 低热阻
- 柔软、恢复速度极快的反向并联晶体管
特别推荐
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STGH30H65DFB-2AG
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所有资源
| Resource title | 版本 | Latest update | Actions | Details | 下載 |
|---|
SPICE models (1)
| Resource title | 版本 | Latest update | Actions | Options | ||
|---|---|---|---|---|---|---|
| ZIP | 1.0 | 12 Apr 2022 | 12 Apr 2022 |
Quality and Reliability
| Part Number | Marketing Status | General Description | Package | Grade | 符合RoHS级别 | Longevity Commitment | Longevity Starting Date | Material Declaration** |
|---|---|---|---|---|---|---|---|---|
| STGH30H65DFB-2AG | Active 产品已量产 | Automotive-grade trench gate field-stop, 650 V, 30 A, high-speed HB series IGBT in an H2PAK-2 package | H2PAK-2 | Automotive | Ecopack1 | 10 | 2024-06-04T00:00:00.000+02:00 |
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
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Sample & Buy
| Part Number | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | General Description | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STGH30H65DFB-2AG | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
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